PART |
Description |
Maker |
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
MBM29DL161BD MBM29DL161BE70PFTN MBM29DL161BE70PFTR |
16M (2M x 8/1M x 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-Y |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 16M Dual Bank NOR Flash Memory
|
http:// Samsung
|
MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
K8D1716UBC K8D1716UTC |
16M-Bit Dual Bank NOR Flash Memory
|
Samsung Electronics
|
MBM29DL164TD-90PFTN MBM29DL164TD-90PFTR MBM29DL161 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
SPANSION[SPANSION]
|
K8D1716UBC-DC07 K8D1716UBC-DC08 K8D1716UBC-DI07 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
http://
|
K8D1716UTC K8D1716UTC-PC07 K8D1716UBC K8D1716UTC-T |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
MBM29LV160B-12PCV MBM29LV160T-12PCV MBM29LV160T-80 |
16M (2M x??8/1M x 16) BIT CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 80 ns, PBGA48 16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO46 CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 120 ns, PDSO48 16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PBGA48 D10 - CONNECTOR ACCESSORY 16M (2M x′ 8/1M x 16) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
W25X16BVSFIG W25X16BVZPIG W25X16BVSNIG W25X16BVSSI |
16M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|